Thin films with quantum defects are emerging as a potential platform for quantum applications. Quantum defects in some thin films arise due to structural imperfections, such as vacancies or impurities. These defects generate localized electronic states with unique optical and electronic properties. Crystal vacancies or defects that occur when atoms are missing from a crystal lattice can influence a material’s quantum properties. In this study, we investigated inexpensive, complementary metal oxide semiconductor compatible materials with quantum defects suitable for room temperature applications. The experiments indicated 5, 15, and 17 ns relaxation times for aluminum nitride, aluminum oxide or alumina, and tin oxides, respectively. For all these materials, distinct resonant peaks are observed at approximately 1.1, 1.6, 2.2, and 2.7 GHz at room temperature (i.e., 21 °C). These peaks exhibit slight frequency shifts, corresponding to known defect locations and thin film material properties. This discovery may lead the way to reliable, cost-effective quantum applications in our daily lives.