Single Hole Spin Qubit Optimization in SOI Quantum Dots Via kk⋅pp Simulations and Perturbative Analysis
Abstract: Hole spin qubits in silicon nanostructures offer fast, all-electrical control through electric-dipole spin resonance (EDSR), yet their performance strongly depends on device geometry. In this work, optimization criteria of Rabi frequency of single-hole spin qubits in silicon-on-insulator (SOI) quantum dots are identified by combining electrostatic and kk⋅pp simulations with a perturbative model of the […]