A Novel n⁺/i-well Dot Ge₁₋ₓSnₓ-on-Si Single-Photon Avalanche Photodiode for High-Fill-Factor Room-Temperature Quantum Applications
Abstract: We propose a novel design of Ge1-xSnx-on-Si single-photon avalanche photodiodes (SPADs) that aim to enhance the fill factor (FF) and minimize noise at room temperature. The device consists of a n+/i-well dot structure designed to eliminate the need for guard rings and multi-dot or array configurations typically used to enhance the active area. This […]

