Single Hole Spin Qubit Optimization in SOI Quantum Dots Via kk⋅pp Simulations and Perturbative Analysis

Abstract: Hole spin qubits in silicon nanostructures offer fast, all-electrical control through electric-dipole spin resonance (EDSR), yet their performance strongly depends on device geometry. In this work, optimization criteria of Rabi frequency of single-hole spin qubits in silicon-on-insulator (SOI) quantum dots are identified by combining electrostatic and kk⋅pp simulations with a perturbative model of the […]

A Novel n⁺/i-well Dot Ge₁₋ₓSnₓ-on-Si Single-Photon Avalanche Photodiode for High-Fill-Factor Room-Temperature Quantum Applications

Abstract: We propose a novel design of Ge1-xSnx-on-Si single-photon avalanche photodiodes (SPADs) that aim to enhance the fill factor (FF) and minimize noise at room temperature. The device consists of a n+/i-well dot structure designed to eliminate the need for guard rings and multi-dot or array configurations typically used to enhance the active area. This […]