Voltage biases are often required to bias Qubits, and yet applying a static bias requires separate chip wires, dramatically increasing the system complexity. An ideal approach would be having a nonvolatile digital or analog memory to avoid these issues. This article shows floating-gate (FG) structures could be used to set and forget potentials and tunnel barrier tuning as well as enable memory applications. It reports FG measurements at cryogenic temperatures (T = 4 K), enabling reprogrammable FG devices in cryogenic environments. Using a multipurpose FG test structure, measurements show the FG device and circuit operation as well as charge programming measurements based on electron tunneling and hot-electron injection at T = 4 K and T = 300 K. These results open applications in classical cryogenic computing, controlling quantum computation, and other cryogenic temperature applications.

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